Search results for "Ion implantation"
showing 10 items of 34 documents
Annealing behaviour of aluminium-implanted InP
2000
The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…
Simulation and optimization of the implantation of holmium atoms into metallic magnetic microcalorimeters for neutrino mass determination experiments
2017
Abstract Several novel experiments designed to investigate the electron neutrino mass in the sub-eV region are based on the calorimetric measurement of the 163Ho electron capture spectrum. For this the 163Ho source, with a required activity of the order of 1 to 100 Bq , needs to be enclosed in the detector, having a volume smaller than 10 − 3 mm 3 . Ion implantation is presently considered to be the most reliable method to enclose this source in the detector homogeneously distributed in a well defined volume. We have investigated the distribution of implanted holmium ions in different target materials and for different implantation energies by means of Monte Carlo simulations based on the S…
Highly efficient isotope separation and ion implantation of 163Ho for the ECHo project
2019
Abstract The effective electron neutrino mass measurement in the framework of the ECHo experiment requires radiochemically pure 163 Ho, which is ion implanted into detector absorbers. To meet the project specifications in efficiency and purity, the entire process chain of ionization, isotope separation , and implantation of 163Ho was optimized. A new two-step resonant laser ionization scheme was established at the 30 kV magnetic mass separator RISIKO. For ionization and separation, an average efficiency of 69 ( 5 ) stat(4)sys% was achieved using intra-cavity frequency doubled Ti:sapphire lasers. The implantation of undesired 166 m Ho, which is present in trace amounts in the initial 163Ho…
On-line Mössbauer measurements at low temperatures of 83mKr implanted into Al
1978
Abstract A vacuum ion implantation chamber housing a helium flow cryostat and a Mossbauer transducer has been constructed and coupled directly to an ion separator for low temperature implantation and on-line Mossbauer measurements. 83m Kr, produced by thermal neutron activation of enriched 82 Kr gas, has been implanted into Al foils in the temperature range 15–300 K. Annealing effects and the temperature dependence of the Lamb-Mossbauer factor have been studied by Mossbauer measurements (at 15–35 K) using the implanted Al targets as sources and Kr/hydrochinone as absorber.
Treatment of grazing-incidence small-angle X-ray scattering data taken above the critical angle
2001
The equations taking into account refraction at the sample surface in grazing-incidence small-angle X-ray scattering (GISAXS) when the angle between the incoming beam and the sample surface is slightly larger than the critical angle are derived and discussed. It is demonstrated that the refraction of both the incoming and the scattered beam at the sample surface affects the GISAXS pattern and that, when a planar bidimensional detector perpendicular to the incoming beam is used, the effect depends on the azimuthal detector angle. The smearing of the pattern depending on the size of the illuminated sample area in grazing incidence is estimated by simulations with Cauchy functions of different…
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
2019
This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 °
Optical active centres in ZnO samples
2006
Abstract In recent years, there has been a resurgence in the interest in the use of ZnO (Eg ∼ 3.37 eV) as a material for a wide range of opto-emitter applications spanning visible and short wavelengths. Bulk, thin films and nanomaterials obtained using different synthesis methods have been investigated for optoelectronic and biotechnological device applications. Nominally undoped bulk samples typically present a myriad-structured near-band-edge recombination, mainly due to free/bound excitons and donor–acceptor pair transitions. Furthermore, deep level emission due to intrinsic defects and extrinsic impurities, such as transition metal ions, are commonly observed in different grades of bulk…
Basics of Ion Scattering in Nanoscale Materials
2009
Energetic ions interact with materials by collisions with the nuclei and electrons of the atoms that make up the material. In these collisions, energy and momentum is transferred from the projectile particle, which is a moving atom or ion, to the target particles (atomic nucleus or electron). Each collision leads to a slowing down of the moving projectile and also a deflection of the trajectory that gives rise to the term scattering, which is often used synonymously to describe the energy transfer process.
Luminescence and structural properties of defects in ion implanted ZnO
2006
ZnO substrates and films were intentionally implanted with rare earth and transition metal ions. The influence of the implantation and subsequent air thermal annealing treatments on the structural and optical properties of ZnO samples were studied by using Rutherford backscattering spectrometry and low temperature photoluminescence techniques. Intraionic Tm-related emission was observed for bulk and ZnO films. Similarly, Eu and Tb-doped ZnO films follow the same trend observed in bulk samples. No intraionic related emission was observed for Eu-doped samples even being the ion in Zn sites and for the Tb-doped samples ion segregation was observed for thermal annealing temperatures above 800 °…
Double implantation in silica glass for metal cluster composite formation: a study by synchrotron radiation techniques
2001
Silica glass containing metal clusters is studied for both basic and applied aspects, related to the physics of cluster formation and to the optical properties of these materials. To obtain such composite structure, Cu+ Ni, Au+ Cu, Au+ Ag, Cu+ Co, and Cu+ Ag sequential implantations in fused silica were realized. The resulting systems, after possible annealing in various atmospheres, were studied by synchrotron radiation-based techniques, namely, extended X-ray absorption fine structure (EXAFS) spectroscopy, grazing incidence X-ray diffraction (GIXRD), and grazing incidence small angle X-ray scattering (GISAXS). The unique potential of these techniques is the capability to investigate dilut…